STP10NK60ZFP

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STP10NK60ZFP - Stmicroelectronics
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Краткое описание: 600V 10A N-CH MOSFET TO-220FP SuperMESH
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This through-hole component offers a low 0.65 Ohm typical drain-source on-resistance and is housed in a TO-220FP package. Key specifications include a 3.75V threshold voltage, 30ns turn-on delay, and 55ns turn-off delay, with a maximum power dissipation of 35W. Operating temperature range is -55°C to 150°C, and the device is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.3mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 750mR
Package/Case TO-220-3
Current Rating 10A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 50
Input Capacitance 1.37nF
Power Dissipation 35W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 55ns
Reach SVHC Compliant No
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 750mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 750mR
Drain to Source Breakdown Voltage 600V