STP10NM60N
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Краткое описание:
600V 10A N-CH MOSFET TO-220 550mR
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 550mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this device boasts a 70W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 15ns fall time, 32ns turn-off delay, and 10ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 550mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 540pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 550mR |
| Drain to Source Breakdown Voltage | 600V |
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