STP10NM65N
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Краткое описание:
650V 9A N-CH MOSFET TO-220 480mR Power
Дополнительная информация
N-CHANNEL Power MOSFET, TO-220 package, featuring 650V drain-source breakdown voltage and 9A continuous drain current. Offers a low 480mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 3V and a threshold voltage of 3V, with a maximum gate-source voltage of 25V. Includes fast switching characteristics with a 12ns turn-on delay and 50ns turn-off delay. Maximum power dissipation is 90W, with operating temperatures from -55°C to 150°C. This component is RoHS compliant and designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 480mR |
| Nominal Vgs | 3V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 850pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 480mR |
| Drain to Source Breakdown Voltage | 650V |
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