STP11NK50Z
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Краткое описание:
500V N-CH MOSFET, 10A, 0.52 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 10A continuous drain current. This through-hole component in a TO-220 package offers a low 0.48 Ohm typical drain-source resistance. Key specifications include a 125W maximum power dissipation, 150°C maximum operating temperature, and fast switching times with a 14.5ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 520mR |
| Package/Case | TO-220 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 1.39nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 14.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 520mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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