MTD3055V
Производится
Увеличить
Краткое описание:
N-CH MOSFET 60V 12A DPAK TO-252 SMT
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-252 DPAK package, featuring a 60V drain-source voltage and 12A continuous drain current. This surface-mount device offers a low 150mΩ maximum drain-source resistance at 10V Vgs and a typical gate charge of 12.7nC. With a maximum power dissipation of 3900mW, it operates across a wide temperature range from -55°C to 175°C. The 3-pin DPAK package utilizes gull-wing leads for reliable surface mounting.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.39(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.52(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 3900mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 12.7nC |
| Typical Gate Charge @ Vgs | 12.7@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 150@10VmOhm |
| Typical Input Capacitance @ Vds | 500(Max)@25VpF |
| Maximum Continuous Drain Current | 12A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
