STP11NM60N
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Краткое описание:
600V 10A N-Channel Power MOSFET TO-220
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 450mΩ and a typical input capacitance of 850pF. Designed for power applications, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 90W. The TO-220 package ensures robust thermal performance, with fast switching characteristics including a 22ns turn-on delay and 12ns fall time. This RoHS compliant device is ideal for high-voltage switching applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 450mR |
| Package/Case | TO-220 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 850pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 370mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 450MR |
| Drain to Source Breakdown Voltage | 600V |
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