STP12PF06
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Краткое описание:
P-Channel 60V 12A 200mR TO-220 Power MOSFET
Дополнительная информация
P-channel MOSFET, 60V drain-source breakdown voltage, 12A continuous drain current, and 200mΩ maximum drain-source on-resistance. Features a TO-220 package for through-hole mounting, 60W power dissipation, and operates within a -55°C to 175°C temperature range. Includes 10ns fall time, 20ns turn-on delay, and 40ns turn-off delay. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Nominal Vgs | 3.4V |
| Termination | Through Hole |
| Package/Case | TO-220 |
| Current Rating | -12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Input Capacitance | 850pF |
| Power Dissipation | 60W |
| Threshold Voltage | 3.4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | -60V |
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