STP13N95K3
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Краткое описание:
N-Channel 950V 10A Power MOSFET TO-220
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET featuring 950V drain-source breakdown voltage and 10A continuous drain current. Offers a typical drain-source on-resistance of 0.68 Ohm, with a maximum of 0.85 Ohm. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include a 21ns fall time, 18ns turn-on delay, and 50ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.62nF |
| Power Dissipation | 190W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 680mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 850mR |
| Drain to Source Breakdown Voltage | 950V |
