STP141NF55

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STP141NF55 - Stmicroelectronics
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Краткое описание: N-Channel MOSFET 55V 80A 8mR TO-220 Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers a low 0.0065 Ohm typical drain-source on-resistance. Housed in a TO-220AB through-hole package, this device supports a maximum power dissipation of 300W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 30ns and fall time of 45ns.
RoHS Compliant
Mount Through Hole
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 45ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 8mR
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 5.3nF
Power Dissipation 300W
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 125ns
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 55V
Drain-source On Resistance-Max 8mR
Drain to Source Breakdown Voltage 55V

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