STP16N65M5
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Краткое описание:
650V 12A N-CH MOSFET TO-220 0.230 Ohm
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.230 Ohm typical drain-source on-resistance, with a maximum of 299mR. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 90W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns fall time, 25ns turn-on delay, and 30ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 299mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.25nF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 299mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 299mR |
| Drain to Source Breakdown Voltage | 650V |
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