STP16NF06FP

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STP16NF06FP - Stmicroelectronics
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Краткое описание: 60V 11A N-CH MOSFET TO-220FP 100mR Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET with 60V drain-source breakdown voltage and 11A continuous drain current. Features 100mΩ maximum drain-source on-resistance and 25W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount configuration, this component is RoHS compliant. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 6ns.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 6ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 100mR
Package/Case TO-220-3
Current Rating 11A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 50
Input Capacitance 315pF
Power Dissipation 25W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 17ns
Reach SVHC Compliant No
Max Power Dissipation 25W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 100mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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