STP16NK60Z

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STP16NK60Z - Stmicroelectronics
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Краткое описание: 600V 14A N-CH MOSFET TO-220 420mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL Power MOSFET featuring 600V drain-source breakdown voltage and 14A continuous drain current. This through-hole component offers a low 0.42ohm drain-source on-resistance and a maximum power dissipation of 190W. Operating across a wide temperature range from -55°C to 150°C, it is housed in a TO-220AB package and is RoHS compliant. Key switching characteristics include a 30ns turn-on delay and a 15ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 420mR
Package/Case TO-220
Current Rating 14A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 1000
Input Capacitance 2.65nF
Power Dissipation 190W
Threshold Voltage 3.75V
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Reach SVHC Compliant No
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 420mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 38R
Drain to Source Breakdown Voltage 600V

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