N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 4.5mΩ drain-source on-resistance. This component offers a continuous drain current of 120A and a maximum power dissipation of 315W, suitable for through-hole mounting in a TO-220 package. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a fall time of 6.9ns and turn-on delay of 25.6ns. The device is RoHS compliant and lead-free.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Series |
STripFET™ III |
| Polarity |
N-CHANNEL |
| Fall Time |
6.9ns |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
5.1mR |
| Package/Case |
TO-220 |
| RoHS Compliant |
Yes |
| Package Quantity |
50 |
| Input Capacitance |
6.665nF |
| Power Dissipation |
315W |
| Number of Elements |
1 |
| Turn-On Delay Time |
25.6ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
99.9ns |
| Max Power Dissipation |
315W |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
4.5mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
120A |
| Drain to Source Voltage (Vdss) |
100V |
| Drain-source On Resistance-Max |
5.1MR |
| Drain to Source Breakdown Voltage |
100V |