STP180N10F3

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STP180N10F3 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 100V 120A 4.5mR TO-220 Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 4.5mΩ drain-source on-resistance. This component offers a continuous drain current of 120A and a maximum power dissipation of 315W, suitable for through-hole mounting in a TO-220 package. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a fall time of 6.9ns and turn-on delay of 25.6ns. The device is RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Series STripFET™ III
Polarity N-CHANNEL
Fall Time 6.9ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 5.1mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 6.665nF
Power Dissipation 315W
Number of Elements 1
Turn-On Delay Time 25.6ns
Radiation Hardening No
Turn-Off Delay Time 99.9ns
Max Power Dissipation 315W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 5.1MR
Drain to Source Breakdown Voltage 100V