STP180N55F3
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Краткое описание:
120A 55V 3.8mR N-CH MOSFET TO-220 Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 120A continuous drain current. This through-hole component offers a low 3.8mΩ drain-source on-resistance and 330W maximum power dissipation. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 25ns turn-on delay and 50ns fall time. The TO-220AB package is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.8mR |
| Nominal Vgs | 4V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 6.8nF |
| Power Dissipation | 330W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 330W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 3.8MR |
| Drain to Source Breakdown Voltage | 55V |
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