STP18N55M5
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Краткое описание:
550V N-Channel MOSFET, 16A, 192mR Rds On, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 550V drain-source breakdown voltage and 13A continuous drain current. Offers a low 0.150 Ohm typical drain-source on-resistance, with a maximum of 240mR. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 90W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns fall time and 29ns turn-off delay time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 192mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.26nF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 240MR |
| Drain to Source Breakdown Voltage | 550V |
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