STP1N105K3

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STP1N105K3 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 1050V 1.4A 11 Ohm TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel SuperMESH3™ Power MOSFET in TO-220 package, featuring 1050V drain-source breakdown voltage and 1.4A continuous drain current. Offers a typical drain-source on-resistance of 8 Ohms, with a maximum of 11 Ohms. Includes fast switching characteristics with a 6ns turn-on delay and 27ns turn-off delay. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 60W.
RoHS Compliant
Mount Through Hole
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 50ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 11R
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 180pF
Power Dissipation 60W
Turn-On Delay Time 6ns
Radiation Hardening No
Turn-Off Delay Time 27ns
Max Power Dissipation 60W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 11R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.4A
Drain to Source Voltage (Vdss) 1.05kV
Drain-source On Resistance-Max 11R
Drain to Source Breakdown Voltage 1.05kV

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