STP200NF03
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Краткое описание:
N-CH 30V 120A 3.2mR MOSFET D2PAK
Дополнительная информация
N-CHANNEL MOSFET featuring 30V Drain to Source Breakdown Voltage and 120A Continuous Drain Current. Offers low 3.2mR Drain to Source Resistance and 3.7mR maximum Drain-source On Resistance. Operates with a 4V Threshold Voltage and 20V Gate to Source Voltage. This component boasts a 300W Power Dissipation and a maximum operating temperature of 175°C, packaged in a TO-220 through-hole mount.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.6mR |
| Package/Case | TO-220 |
| Current Rating | 120A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 50 |
| Input Capacitance | 4.95nF |
| Power Dissipation | 300W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.7mR |
| Drain to Source Breakdown Voltage | 30V |
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