STP200NF04L

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STP200NF04L - Stmicroelectronics
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Краткое описание: 40V 120A N-CH MOSFET, 3.8mR Rds(on), TO-220AB
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, TO-220AB package, featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.8mΩ maximum drain-source on-resistance. Operates with a 16V gate-source voltage and boasts a maximum power dissipation of 300W. Includes fast switching characteristics with 37ns turn-on delay and 80ns fall time. Designed for through-hole mounting and RoHS compliant.
RoHS Compliant
Mount Through Hole
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 80ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.8mR
Package/Case TO-220AB
Current Rating 120A
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 1000
Input Capacitance 6.4nF
Power Dissipation 300W
Turn-On Delay Time 37ns
Radiation Hardening No
Turn-Off Delay Time 90ns
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 3.8MR
Drain to Source Breakdown Voltage 40V

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