STP20NM50
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Краткое описание:
500V 20A N-CH MOSFET, 250mR Rds On, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. This MDmesh™ series component offers a low 0.20 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it supports a maximum power dissipation of 192W and operates within a temperature range of -65°C to 150°C. Key switching characteristics include a 24ns turn-on delay and 8.5ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 8.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 250mR |
| Package/Case | TO-220 |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 1.48nF |
| Power Dissipation | 192W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 192W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Drain to Source Breakdown Voltage | 500V |
