STP20NM60FP
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Краткое описание:
600V 20A N-Channel TO-220FP Power MOSFET
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 20A Continuous Drain Current, 290mΩ Max Drain-Source On-Resistance. Features 45W Max Power Dissipation, 1.5nF Input Capacitance, and 11ns Fall Time. Operates within -65°C to 150°C temperature range. Through-hole mounting in a TO-220-3 package. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.3mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 290mR |
| Package/Case | TO-220-3 |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 50 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 45W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 290mR |
| Drain to Source Breakdown Voltage | 600V |
