STP210N75F6
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Краткое описание:
75V 120A N-CH MOSFET TO-220 3.7mR Power Transistor
Дополнительная информация
N-Channel Power MOSFET featuring 75V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.7mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component operates within a -55°C to 175°C temperature range with a maximum power dissipation of 300W. Key electrical characteristics include a 2V threshold voltage and 11.8nF input capacitance.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 71ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.7mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 11.8nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 34ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 154ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 3.7MR |
| Drain to Source Breakdown Voltage | 75V |
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