STP21N90K5
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Краткое описание:
900V N-CH Power MOSFET TO-220AB
Дополнительная информация
N-channel enhancement mode power MOSFET designed for high voltage applications. Features a maximum drain-source voltage of 900V and a continuous drain current of 18.5A. Housed in a 3-pin TO-220AB through-hole package with a tab, offering a maximum power dissipation of 250W. Key electrical characteristics include a low on-resistance of 299mΩ at 10V and a typical gate charge of 43nC. Operating temperature range spans from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.7(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 1.9 |
| Package Width (mm) | 4.6(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.15(Max) |
| Package Length (mm) | 10.4(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.68(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 43nC |
| Typical Gate Charge @ Vgs | 43@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Drain Source Resistance | 299@10VmOhm |
| Typical Input Capacitance @ Vds | 1645@100VpF |
| Maximum Continuous Drain Current | 18.5A |
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