STP21NM60ND

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STP21NM60ND - Stmicroelectronics
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Краткое описание: 600V 17A N-CH MOSFET TO-220 220mR FDmesh II
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers a low 0.17 Ohm typical drain-source on-resistance and includes a fast diode. Packaged in a TO-220 through-hole mount, this component operates from -55°C to 150°C with a maximum power dissipation of 140W. Key electrical characteristics include a 4V threshold voltage and 1.8nF input capacitance.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 48ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 220mR
Package/Case TO-220
RoHS Compliant Yes
Input Capacitance 1.8nF
Power Dissipation 140W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Reach SVHC Compliant No
Max Power Dissipation 140W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 220mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 220mR
Drain to Source Breakdown Voltage 600V

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