STP23NM50N
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Краткое описание:
500V N-CH MOSFET, 17A, 162mR RdsOn, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 17A continuous drain current. Offers a maximum drain-source on-resistance of 190mR at a nominal gate-source voltage of 3V. This through-hole component, housed in a TO-220 package, boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 6.6ns and a fall time of 29ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Nominal Vgs | 3V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.33nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 71ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 162mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 190mR |
| Drain to Source Breakdown Voltage | 500V |
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