STP23NM60ND
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Краткое описание:
600V 19.5A N-CH MOSFET TO-220 180mR
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 19.5A continuous drain current. Offers a low 180mΩ drain-source on-resistance and a fast diode for enhanced performance. Packaged in a TO-220 through-hole mount with a maximum power dissipation of 150W. Operating temperature range from -55°C to 150°C, with typical turn-on delay of 21ns and fall time of 40ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.1nF |
| Power Dissipation | 150W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 19.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
| Drain to Source Breakdown Voltage | 600V |
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