STP240N10F7

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STP240N10F7 - Stmicroelectronics
Краткое описание: 100V N-Channel MOSFET, 2.85mΩ RdsOn, 110A, TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and 180A continuous drain current. Offers low 2.85 mOhm typical drain-source on-resistance and 300W maximum power dissipation. Packaged in a TO-220 through-hole mount, this component boasts fast switching speeds with a 40ns fall time. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series DeepGATE™, STripFET™ VII
Polarity N-CHANNEL
Fall Time 40ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.2mR
Package/Case TO-220
RoHS Compliant Yes
Input Capacitance 12.6nF
Power Dissipation 300W
Turn-On Delay Time 62ns
Radiation Hardening No
Turn-Off Delay Time 148ns
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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