STP2N95K5
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Краткое описание:
950V N-CH MOSFET, 2A, 4.2R Rds(on), TO-220
Дополнительная информация
N-channel Power MOSFET, 950V Drain to Source Breakdown Voltage, 2A Continuous Drain Current, and 4.2 Ohm typical Drain to Source Resistance. Features include 8.5ns Turn-On Delay Time, 20.5ns Turn-Off Delay Time, and 32.5ns Fall Time. This component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 45W. Packaged in a TO-220-3 through-hole mount, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH5™ |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 32.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 5R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 105pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain to Source Breakdown Voltage | 950V |
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