STP2NK100Z
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Краткое описание:
1kV N-Ch MOSFET, 1.85A, 8.5R RdsOn, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, TO-220 package. Features 1000V drain-source breakdown voltage, 1.85A continuous drain current, and 8.5 Ohm maximum drain-source on-resistance. Operates with a 3.75V threshold voltage and 30V gate-source voltage. Includes Zener protection and a maximum power dissipation of 70W. Through-hole mount, RoHS compliant, with operating temperatures from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 8.5R |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 499pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 7.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.85A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 8.5R |
| Drain to Source Breakdown Voltage | 1kV |
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