STP30N65M5

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STP30N65M5 - Stmicroelectronics
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Краткое описание: 650V 22A N-CH MOSFET TO-220 125mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. Offers a low 0.125 Ohm typical drain-source resistance and 140W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this component boasts fast switching characteristics with 10ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 139mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.88nF
Power Dissipation 140W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 50ns
Turn-Off Delay Time 50ns
Reach SVHC Compliant No
Max Power Dissipation 140W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 125mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22A
Drain to Source Voltage (Vdss) 650V
Drain to Source Breakdown Voltage 650V

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