STP310N10F7

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STP310N10F7 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 100V 180A 2.7mR TO-220 Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and 2.3 mOhm typical on-resistance. This component offers a continuous drain current of 180A and a maximum power dissipation of 315W, housed in a TO-220 through-hole package. Key specifications include a 3.5V threshold voltage, 12.8nF input capacitance, and operating temperatures from -55°C to 175°C. It is RoHS compliant and part of the STripFET F7 series.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series DeepGATE™, STripFET™ VII
Polarity N-CHANNEL
Fall Time 40ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 2.7mR
Package/Case TO-220
RoHS Compliant Yes
Input Capacitance 12.8nF
Power Dissipation 315W
Threshold Voltage 3.5V
Number of Elements 1
Turn-On Delay Time 62ns
Radiation Hardening No
Turn-Off Delay Time 148ns
Reach SVHC Compliant No
Max Power Dissipation 315W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 2.7MR
Drain to Source Breakdown Voltage 100V

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