STP3LN62K3

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STP3LN62K3 - Stmicroelectronics
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Краткое описание: 620V 2.5A N-CH MOSFET, 3R RdsOn, TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL Power MOSFET, TO-220 package, featuring 620V drain-source breakdown voltage and 2.5A continuous drain current. Offers a maximum drain-source on-resistance of 3 ohms at a nominal gate-source voltage of 3.75V. This through-hole mounted component has a maximum power dissipation of 45W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 9ns and fall time of 27ns.
RoHS Not CompliantNo
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 27ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3R
Nominal Vgs 3.75V
Package/Case TO-220
RoHS Compliant No
Package Quantity 50
Input Capacitance 386pF
Power Dissipation 45W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 620V
Drain-source On Resistance-Max 3R
Drain to Source Breakdown Voltage 620V

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