STP3N62K3
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Краткое описание:
620V 2.7A N-CH MOSFET TO-220 2.5R
Дополнительная информация
N-channel MOSFET with 620V drain-source breakdown voltage and 2.7A continuous drain current. Features 2.5 Ohm drain-source on-resistance and 45W power dissipation. Operates from -55°C to 150°C, housed in a TO-220 package for through-hole mounting. Includes fast switching characteristics with turn-on delay of 9ns and fall time of 15.6ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 15.6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.5R |
| Nominal Vgs | 3.75V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 385pF |
| Power Dissipation | 45W |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 2.5R |
| Drain to Source Breakdown Voltage | 620V |
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