STP3N80K5
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Краткое описание:
800V N-Channel MOSFET, 2.5A, 2.8 Ohm, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a typical 2.8 Ohm drain-source resistance, with a maximum of 3.5 Ohm. Operating across a wide temperature range from -55°C to 150°C, it boasts a 60W maximum power dissipation and 130pF input capacitance. Designed for efficiency, it exhibits fast switching characteristics with a 20.5ns turn-off delay and 8.5ns turn-on delay. Packaged in a TO-220-3 configuration, this RoHS compliant device is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH5™ |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.5R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 130pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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