STP3NK60ZFP

Не рекомендуется для новых проектов
STP3NK60ZFP - Stmicroelectronics
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Краткое описание: 600V N-CH MOSFET, 2.4A, 3.6R RdsOn, TO-220FP
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel SuperMESH PowerMOSFET featuring 600V drain-source breakdown voltage and 2.4A continuous drain current. This through-hole component offers a typical 3.2 Ohm drain-source resistance and 20W power dissipation. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C. The TO-220FP package facilitates easy integration into electronic circuits.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 14ns
Packaging Rail/Tube
Rds On Max 3.6R
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 311pF
Power Dissipation 20W
Threshold Voltage 3.75V
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.4A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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