STP400N4F6

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STP400N4F6 - Stmicroelectronics
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Краткое описание: 40V 120A N-CH MOSFET TO-220 1.7mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. This component offers a low 1.7mΩ drain-source on-resistance and is housed in a TO-220 package for through-hole mounting. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 300W. The device is RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series DeepGATE™, STripFET™ VI
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 1.7mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 20nF
Number of Channels 1
Radiation Hardening No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 1.7mR
Drain to Source Breakdown Voltage 40V

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