STP45N10F7

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STP45N10F7 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 100V 45A 18mR TO-220 Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. This component offers a low 0.013 Ohm typical drain-source on-resistance and 18mR maximum. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 60W. Key switching parameters include an 8ns fall time, 15ns turn-on delay, and 24ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series DeepGATE™, STripFET™ VII
Weight 0.01164oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 18mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.64nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 24ns
Max Power Dissipation 60W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 45A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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