STP4NK50ZD
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500V N-CH MOSFET, 3A, 2.7 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This through-hole component offers a low 2.4 Ohm typical drain-to-source resistance and 45W maximum power dissipation. Designed for efficient switching, it exhibits a 9.5ns turn-on delay and 22ns fall time. Encased in a TO-220 package, this RoHS compliant device operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.7R |
| Package/Case | TO-220 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 310pF |
| Power Dissipation | 45W |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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