STP4NK60ZFP
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Краткое описание:
600V 4A N-CH MOSFET TO-220FP, 2 Ohm Rds(on)
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a low 1.7 Ohm typical on-state resistance and a maximum power dissipation of 70W. Designed for efficient switching, it exhibits a 12ns turn-on delay and 16.5ns fall time. The MOSFET is housed in a TO-220FP package, operating from -55°C to 150°C, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.3mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 16.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Nominal Vgs | 3.75V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 510pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 600V |
| On-State Resistance | 2R |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Drain to Source Breakdown Voltage | 600V |
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