STP4NK80Z
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Краткое описание:
800V 3A N-CH MOSFET TO-220 3.5R RdsOn
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a low 2.7 Ohm typical drain-source on-resistance and 80W maximum power dissipation. Designed for demanding applications, it operates within a -55°C to 150°C temperature range and is housed in a standard TO-220 package. Key switching characteristics include a 13ns turn-on delay and 32ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.5R |
| Package/Case | TO-220 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 50 |
| Input Capacitance | 575pF |
| Power Dissipation | 80W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3.5R |
| Drain to Source Breakdown Voltage | 800V |
