STP5N62K3
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Краткое описание:
620V N-CH MOSFET 4.2A 1.6R TO-220
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 4.2A continuous drain current, and 1.6 Ohm max drain-source on-resistance. Features a TO-220 package for through-hole mounting, 70W power dissipation, and 150°C max operating temperature. Includes 680pF input capacitance and fast switching times with 12ns turn-on delay and 21ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.6R |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 680pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.6R |
| Drain to Source Breakdown Voltage | 620V |
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