STP7NM60N
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Краткое описание:
600V 5A N-Channel Power MOSFET TO-220 900mR
Дополнительная информация
N-Channel Power MOSFET, TO-220 package, featuring 600V drain-source breakdown voltage and 5A continuous drain current. Offers a maximum drain-source on-resistance of 900mΩ. Operates with a gate-source voltage up to 25V and a threshold voltage of 3V. Includes fast switching characteristics with a fall time of 12ns and turn-off delay of 26ns. Maximum power dissipation is 45W, with operating temperatures from -55°C to 150°C. RoHS compliant and designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 900mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 363pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 900mR |
| Drain to Source Breakdown Voltage | 600V |
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