STP80NF55-08

Не рекомендуется для новых проектов
STP80NF55-08 - Stmicroelectronics
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Краткое описание: 55V 80A N-CH MOSFET TO-220 8mR Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This TO-220 packaged component offers a low 8mΩ maximum drain-source on-resistance. With a 300W maximum power dissipation and a wide operating temperature range of -55°C to 175°C, it is designed for high-power applications. Key switching characteristics include a 25ns fall time, 20ns turn-on delay, and 75ns turn-off delay. This RoHS compliant device is suitable for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 8mR
Package/Case TO-220
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 55V
Package Quantity 50
Input Capacitance 3.85nF
Power Dissipation 300W
Threshold Voltage 3V
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 75ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 55V
Drain-source On Resistance-Max 8mR
Drain to Source Breakdown Voltage 55V

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