STP80NF55L-06

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STP80NF55L-06 - Stmicroelectronics
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Краткое описание: 55V 80A N-CH MOSFET TO-220 6.5mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET featuring 55V drain-source breakdown voltage and a low 6.5mΩ maximum drain-source on-resistance. This component offers a continuous drain current of 80A and a maximum power dissipation of 300W. Packaged in a TO-220 through-hole mount, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 32ns turn-on delay and an 80ns fall time, with an input capacitance of 4.85nF. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 80ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 6.5mR
Package/Case TO-220
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 55V
Package Quantity 50
Input Capacitance 4.85nF
Power Dissipation 300W
Threshold Voltage 3V
Turn-On Delay Time 32ns
Radiation Hardening No
Turn-Off Delay Time 135ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6.5mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 55V
Drain-source On Resistance-Max 6.5mR
Drain to Source Breakdown Voltage 55V

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