STP8NK80ZFP
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Краткое описание:
800V N-CH MOSFET, 6.2A, 1.5R, TO-220FP
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 800V drain-source breakdown voltage, 6.2A continuous drain current, and 1.5 Ohm drain-source on-resistance. Features Zener protection, 30V gate-source voltage, and 30W power dissipation. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 17ns and fall time of 28ns. Operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.32nF |
| Power Dissipation | 30W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 48ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.5R |
| Drain to Source Breakdown Voltage | 800V |
