STP8NM60FP
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Краткое описание:
600V 8A N-CH MOSFET, 1 Ohm, TO-220FP, Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 1-ohm drain-source on-resistance and a maximum power dissipation of 30W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 14ns and fall time of 10ns. Packaged in TO-220AB or TO-220FP, this RoHS compliant device is ideal for power switching applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1R |
| Package/Case | TO-220-3 |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 50 |
| Input Capacitance | 400pF |
| Power Dissipation | 30W |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 1R |
| Drain to Source Breakdown Voltage | 600V |
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