STP9NM60N

Не рекомендуется для новых проектов
STP9NM60N - Stmicroelectronics
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Краткое описание: 600V 6.5A N-Ch MOSFET TO-220 700mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 6.5A continuous drain current. This through-hole component offers a maximum on-resistance of 700mΩ and a threshold voltage of 3V. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 70W. The TO-220 package houses a single element with typical turn-on delay of 28ns and fall time of 26.7ns.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series MDmesh™
Fall Time 26.7ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 745mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 452pF
Power Dissipation 70W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 28ns
Turn-Off Delay Time 52.5ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 6.5A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 700mR

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