STPSA92
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300V PNP BJT Transistor, 500mA, 50MHz, TO-92
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Operates with a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Packaged in a TO-92 through-hole mount configuration. Rated for a maximum power dissipation of 625mW and operates across a temperature range of -65°C to 150°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 50MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Package Quantity | 2500 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
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