STS12NF30L
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Краткое описание:
12A 30V 9mR N-CH MOSFET SOIC
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 12A continuous drain current. Offers low on-state resistance of 9mR (typical) at 11mR (max) and a maximum power dissipation of 2.5W. Designed for surface mounting in an SOIC package with a fall time of 35ns and turn-on delay time of 35ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Row Spacing | 6.3mm |
| Package/Case | SOIC |
| Current Rating | 12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Dual Supply Voltage | 30V |
| On-State Resistance | 11mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9mR |
| Drain to Source Breakdown Voltage | 30V |
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