STS4DNF60L
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Краткое описание:
60V 4A N-Ch MOSFET SOIC 55mR RdsOn
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 55mΩ maximum drain-source on-resistance. This surface-mount device offers a continuous drain current of 4A and a maximum power dissipation of 2W. It operates within a temperature range of -55°C to 150°C and is packaged in SOIC for tape and reel distribution. Key switching characteristics include a 15ns turn-on delay and a 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOIC |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2500 |
| Input Capacitance | 1.03nF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.7V |
| Number of Elements | 2 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 55mR |
| Drain to Source Breakdown Voltage | 60V |
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