STS4DNFS30L
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Краткое описание:
30V 4A N-CH MOSFET, 55mR RdsOn, SOP-8
Дополнительная информация
N-CHANNEL Power MOSFET, SO package, offering 30V drain-source breakdown voltage and 4A continuous drain current. Features low 56mΩ maximum drain-source on-resistance and 2W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes 330pF input capacitance and fast switching times with 11ns turn-on delay and 22ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SO |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 330pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 44mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 56mR |
| Drain to Source Breakdown Voltage | 30V |
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